| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 81.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.102 Ω |
| Polarity | P-Channel |
| Power Dissipation | 81.1 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 18.7A |
| Rise Time | 5.8 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 81.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 15.95 mm |
The SPP18P06P H is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
● Enhancement-mode
● Avalanche rated
● Small signal packages approved to AEC-Q101
● dV/dt Rated
● Halogen-free, Green device
● AEC-Q101 Qualified
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