| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 208 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 190 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Threshold Voltage | 4.5 V |
| Input Capacitance | 3.00 nF |
| Gate Charge | 103 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 3000pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 208W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The SPP20N60S5 is a 600V N-channel CoolMOS™ Power MOSFET with innovative high voltage technology. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Worldwide best RDS (ON) in TO-251 and TO-252
● Ultra low gate charge
● Periodic avalanche rated
● Extreme dv/dt rated
● Ultra low effective capacitances
● Improved transconductance
Infineon
11 Pages / 0.36 MByte
Infineon
12 Pages / 0.34 MByte
Infineon
1 Pages / 0.13 MByte
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