| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 20.7 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 190 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 208 W |
| Input Capacitance | 2.40 nF |
| Gate Charge | 114 nC |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 650 V |
| Continuous Drain Current (Ids) | 20.7 A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 2400pF @25V(Vds) |
| Input Power (Max) | 208 W |
| Fall Time | 4.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Feature
●• New revolutionary high voltage technology
●• Worldwide best RDS(on) in TO 220
●• Ultra low gate charge
●• Periodic avalanche rated
●• Extreme dv/dt rated
●• High peak current capability
●• Improved transconductance
Infineon
15 Pages / 1.89 MByte
Infineon
270 Pages / 11.59 MByte
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38 Pages / 0.73 MByte
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37 Pages / 2.01 MByte
Infineon
Trans MOSFET N-CH 650V 20.7A 3Pin TO-220
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