| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 650 V |
| Current Rating | 800 mA |
| Case/Package | TO-251 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5.6 Ω |
| Polarity | N-Channel |
| Power Dissipation | 11 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 100 pF |
| Gate Charge | 5.00 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 800 mA |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 100pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 11000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.41 mm |
Summary of Features:
● Low specific on-state resistance
● (R on
●A)
● Very low energy storage in output capacitance (E oss) @400V
● Low gate charge (Q g)
● Fieldproven CoolMOS™ quality
● CoolMOS™ technology has been manufactured by Infineon since 1998
●Benefits:
● High efficiency and power density
● Outstanding cost/performance
● High reliability
● Ease-of-use
●Target Applications:
● Server
● Telecom
● Consumer
● PC power
● Adapter
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