TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 650 V |
Current Rating | 47.0 A |
Case/Package | TO-247-3 |
Power Rating | 415 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 70 mΩ |
Polarity | N-Channel |
Power Dissipation | 415 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 47.0 A |
Rise Time | 27 ns |
Input Capacitance (Ciss) | 6800pF @25V(Vds) |
Input Power (Max) | 415 W |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 415W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.9 mm |
Size-Width | 5.3 mm |
Size-Height | 20.95 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Feature
●• New revolutionary high voltage technology
●• Worldwide best RDS(on) in TO 247
●• Ultra low gate charge
●• Periodic avalanche rated
●• Extreme dv/dt rated
●• Ultra low effective capacitances
Infineon
14 Pages / 0.8 MByte
Infineon
20 Pages / 2.6 MByte
Infineon
1 Pages / 0.12 MByte
Infineon
Transistor,mosfet,n-channel,600V V Br Dss,47A I D ,to-247var
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