| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 560 V |
| Current Rating | 52.0 A |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 417 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 6.80 nF |
| Gate Charge | 290 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Input Capacitance (Ciss) | 6800pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 417 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail, Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
The SPW52N50C3 is a CoolMOS™ N-channel Power MOSFET comes with a new revolutionary high voltage technology. It offers ultra-low gate charge and ultra-low effective capacitances. The 500V CoolMOS™ C3 is Infineon"s third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.
● Low specific ON-state resistance
● Very low energy storage in output capacitance (Eoss) @ 400V
● Low gate charge (Qg)
● Field proven CoolMOS™ quality
● High efficiency and power density
● High reliability
● Ease of use
● Periodic avalanche rated
● Extreme dV/dt rated
● Improved transconductance
●Replacement for 500V CoolMOS™ C3 is 500V CoolMOS™ CE.
Infineon
12 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
CoolMOS⢠Power Transistor
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