TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.077 Ω |
Polarity | N-Channel |
Power Dissipation | 500 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 850 V |
Continuous Drain Current (Ids) | 54.9A |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 7520pF @100V(Vds) |
Fall Time | 9 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.13 mm |
Size-Width | 5.21 mm |
Size-Height | 5.21 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The SPW55N80C3 is a 800V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Very low energy storage in output capacitance (Eoss) at 400V
● Low gate charge (Qg)
● High efficiency and power density
● Outstanding performance
● High reliability
● Easy to use
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