TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 25.0 V |
Current Rating | 1.50 A |
Case/Package | TO-226-3 |
Power Rating | 1 W |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1 W |
Breakdown Voltage (Collector to Emitter) | 25 V |
Continuous Collector Current | 1.5A |
hFE Min | 120 @100mA, 1V |
hFE Max | 300 |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 1 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | 150℃ (TJ) |
The SS8050CBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation.
● Complimentary to SS8550
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