| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 1.50 A |
| Case/Package | TO-226-3 |
| Power Rating | 1 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 120 @100mA, 1V |
| hFE Max | 300 |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | 150℃ (TJ) |
The SS8050CBU is a NPN Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation.
● Complimentary to SS8550
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