| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 60 |
| Input Power (Max) | 450 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 450 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 45V 100mA 270MHz 450mW Through Hole TO-92-3
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Trans GP BJT NPN 45V 0.1A 450mW 3Pin TO-92 Bag
ON Semiconductor
Trans GP BJT NPN 45V 0.1A 450mW 3Pin TO-92 Bag
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