| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 270 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 450 mW |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| hFE Min | 200 @1mA, 5V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 450 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
The SS9014CBU is a NPN Epitaxial Silicon Transistor designed for use as a pre-amplifier, low level and low noise applications.
● High total power dissipation
● High hFE and good linearity
● Complementary to SS9015
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