| TYPE | DESCRIPTION |
|---|
| Case/Package | UFM-3 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 2.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Size-Length | 2 mm |
| Size-Width | 1.7 mm |
| Size-Height | 0.7 mm |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • 2.5V drive • Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V)
Toshiba
5 Pages / 0.13 MByte
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