PRODUCT DESCRIPTION
●The SST39LF512, SST39LF010,SST39LF020, SST39LF040 and SST39VF512, SST39VF010,SST39VF020, SST39VF040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
●FEATURES:
●• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
●• Single Voltage Read and Write Operations
●– 3.0-3.6V for SST39LF512/010/020/040
●– 2.7-3.6V for SST39VF512/010/020/040
●• Superior Reliability
●– Endurance: 100,000 Cycles (typical)
●– Greater than 100 years Data Retention
●• Low Power Consumption(typical values at 14 MHz)
●– Active Current: 5 mA (typical)
●– Standby Current: 1 µA (typical)
●• Sector-Erase Capability
●– Uniform 4 KByte sectors
●• Fast Read Access Time:
●– 45 ns for SST39LF512/010/020/040
●– 55 ns for SST39LF020/040
●– 70 ns for SST39VF512/010/020/040
●• Latched Address and Data
●• Fast Erase and Byte-Program:
●– Sector-Erase Time: 18 ms (typical)
●– Chip-Erase Time: 70 ms (typical)
●– Byte-Program Time: 14 µs (typical)
●– Chip Rewrite Time:
● 1 second (typical) for SST39LF/VF512
● 2 seconds (typical) for SST39LF/VF010
● 4 seconds (typical) for SST39LF/VF020
● 8 seconds (typical) for SST39LF/VF040
●• Automatic Write Timing
●– Internal VPPGeneration
●• End-of-Write Detection
●– Toggle Bit
●– Data# Polling
●• CMOS I/O Compatibility
●• JEDEC Standard
●– Flash EEPROM Pinouts and command sets
●• Packages Available
●– 32-lead PLCC
●– 32-lead TSOP (8mm x 14mm)
●– 48-ball TFBGA (6mm x 8mm)
●– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
●• All devices are RoHS compliant
