| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 1.5A |
| hFE Min | 5 @1A, 2V |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Operating Temperature | 150℃ (TJ) |
Description
●The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.
●Features
●■ High voltage capability
●■ Low spread of dynamic parameters
●■ Minimum lot-to-lot spread for reliable operation
●■ Very high switching speed
●■ Integrated antiparallel collector-emitter diode
●Applications
●■ Electronic ballast for fluorescent lighting
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