| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 8A |
DESCRIPTION
●The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.
●■ HIGH VOLTAGE CAPABILITY
●■ NPN TRANSISTOR
●■ LOW SPREAD OF DYNAMIC PARAMETERS
●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
●■ VERY HIGH SWITCHING SPEED
●■ FULLY CHARACTERIZED AT 125 oC
●■ LARGE RBSOA
●APPLICATIONS
●■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
●■ SWITCH MODE POWER SUPPLIES
ST Microelectronics
6 Pages / 0.06 MByte
Samtec
Board Connector, 60 Contact(s), 2 Row(s), Hermaphroditic, Straight, 0.1 inch Pitch, Solder Terminal, Locking, Black Insulator, Socket, ROHS COMPLIANT
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