| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0043 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 120 A |
| Rise Time | 220 ns |
| Input Capacitance (Ciss) | 5100pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STB100NF04T4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique STripFET process. It is specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Standard threshold drive
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
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N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
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