TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 10.0 A |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.65 Ω |
Polarity | N-Channel |
Power Dissipation | 115 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 4.50 A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 1370pF @25V(Vds) |
Input Power (Max) | 115 W |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 115000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.4 mm |
Size-Width | 9.35 mm |
Size-Height | 4.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STB10NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
ST Microelectronics
19 Pages / 0.85 MByte
ST Microelectronics
25 Pages / 0.9 MByte
ST Microelectronics
24 Pages / 0.91 MByte
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 Zener-protected Supermesh Power MOSFET
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