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●ST-Microelectronics
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●Description
●The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
●General features
●■ High dv/dt and avalanche capabilities
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●Applications
●■ Switching application
ST Microelectronics
N-CHANNEL 800V - 0.35Ω - 11A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET
ST Microelectronics
N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK/D2PAK FDMESH MOSFET (WITH FAST DIODE)
ST Microelectronics
Power MOSFET, N Channel, 5.5A, 650V, 400mohm, 10V, 4V
ST Microelectronics
MOSFET Power N-Ch 525V 0.41Ω 10A SuperMESH3 125W
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