| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 17A |
| Rise Time | 28 ns |
| Maximum Forward Voltage (Max) | 1.6 V |
| Input Capacitance (Ciss) | 2070pF @50V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The STB18NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics" revolutionary MDmesh™ technology, which associates the multiple drain process with the company"s PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST"s proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
● 100% Avalanche tested
● Low gate input resistance
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