| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Power Dissipation | 90 W |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 800pF @25V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with
●standard parts from various sources.
●■ Extremely high dv/dt capability
●■ Gate charge minimized
●■ Very low intrinsic capacitances
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