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STB200NF03T4 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-263-3
Description:	STMICROELECTRONICS STB200NF03T4 MOSFET Transistor, N Channel, 120A, 30V, 3.2mohm, 10V, 4V
Documentation:	STB200NF03T4 Datasheet (18 Pages)Package Outline Dimension on12 Page 13 Page 14 Page 15 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STB200NF03T4 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	30.0 V
Current Rating	120 A
Case/Package	TO-263-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	3.2 mΩ
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	195 ns
Input Capacitance (Ciss)	4950pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	60 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW