| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 4.6 mΩ |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Rise Time | 270 ns |
| Input Capacitance (Ciss) | 6400pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 8.95 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
DESCRIPTION
●This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.
●General Features
●■ TYPICAL RDS(on) = 3mΩ
●■ 100% AVALANCHE TESTED
●■ LOW THERESHOLD DRIVE
●APPLICATIONS
●■ HIGH CURRENT, HIGH SWITCHING SPEED
ST Microelectronics
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