STB38N65M5 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-263-3
Description:	N-Channel 650V 27A 0.095Ω 190W Surface Mount Power Mosfet - D2PAK-3
Documentation:	STB38N65M5 Datasheet (22 Pages)Package Outline Dimension on10 Page 11 Page 12 Page 13 Page 14 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STB38N65M5 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	95 mΩ
Power Dissipation	190 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	650 V
Breakdown Voltage (Drain to Source)	650 V
Rise Time	9 ns
Input Capacitance (Ciss)	3000pF @100V(Vds)
Input Power (Max)	190 W
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	190W (Tc)