STB47N60DM6AG Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Case Package:	TO-263
Description:	Automotive-grade N-channel 600 V, 0.070 Ohm typ., 36 A MDmesh DM6 Power MOSFET in a D2PAK package
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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STB47N60DM6AG Specifications

TYPE	DESCRIPTION
Case/Package	TO-263
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.07 Ω
Power Dissipation	250 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	600 V
Rise Time	5.5 ns
Input Capacitance (Ciss)	2350pF @100V(Vds)
Fall Time	9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW

TYPE	DESCRIPTION
Packaging	Tape & Reel (TR)

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