| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 8.5 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 56.0 A, 80.0 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 2200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 11.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.75 mm |
| Size-Width | 10.4 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STB60N55F3 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 110000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with stripfet iii technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
ST Microelectronics
20 Pages / 0.6 MByte
ST Microelectronics
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