| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 1.00 A |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 1A |
| hFE Min | 10 @400mA, 5V |
| hFE Max | 30 |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 10 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 4.95 mm |
| Size-Width | 3.94 mm |
| Size-Height | 4.95 mm |
| Operating Temperature | 150℃ (TJ) |
The STBV42 is a 400V High Voltage Fast Switching NPN Power Transistor manufactured using high voltage Multiepitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● High voltage capability
● Low spread of dynamic parameters
● Very high switching speed
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
10 Pages / 0.25 MByte
ST Microelectronics
1 Pages / 0.01 MByte
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