| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 80A |
| Rise Time | 205 ns |
| Input Capacitance (Ciss) | 2060pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 6.2 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Increase the current or voltage in your circuit with this STD100N3LF3 power MOSFET from STMicroelectronics. Its maximum power dissipation is 110000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ST Microelectronics
14 Pages / 0.32 MByte
ST Microelectronics
15 Pages / 0.3 MByte
ST Microelectronics
N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET⢠II Power MOSFET
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