| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -10.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | P-Channel |
| Power Dissipation | 40 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 850pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 40W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 175℃ (TJ) |
The STD10PF06T4 is a STripFET™ II P-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● 0.18R RDS (ON)
● Exceptional dV/dt capability
● 100% Avalanche tested
● Low gate charge
● Application oriented characterization
● Surface-mount power package
ST Microelectronics
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