| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Dissipation | 90 W |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 18.5 ns |
| Input Capacitance (Ciss) | 850pF @50V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.2 mm |
| Operating Temperature | 150℃ (TJ) |
Description
●This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
●General features
●■ 100% avalanche tested
●■ Low input capacitance and gate charge
●■ Low gate input resistancel
●Applications
●■ Switching application
ST Microelectronics
20 Pages / 0.61 MByte
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
ST Microelectronics
N-channel 600 V - 0.37 Ω - 10 A - TO-220 \- TO-220FP- I2PAK \- IPAK DPAK \- D2PAK second generation MDmesh⢠Power MOSFET
ST Microelectronics
N-channel 600 V, 0.37 Ω, 10 A, FDmesh⢠II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
ST Microelectronics
N-channel 600V, 0.37Ω, 10A MDmesh(TM) II Power MOSFET in a DPAK package
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