| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | N-Channel |
| Power Dissipation | 90 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 550 V |
| Breakdown Voltage (Drain to Source) | 550 V |
| Continuous Drain Current (Ids) | 16A |
| Rise Time | 9.5 ns |
| Input Capacitance (Ciss) | 1260pF @100V(Vds) |
| Input Power (Max) | 90 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
The STD18N55M5 is a MDmesh™ V N-channel Power MOSFET based on an innovative proprietary vertical process technology with PowerMESH™ horizontal layout structure. The device has extremely low ON-resistance, which is unmatched among silicon based power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Higher VDSS rating
● High dV/dt capability
● Excellent switching performance
● Easy to drive
● 100% Avalanche tested
● -55 to 150°C Operating junction temperature range
ST Microelectronics
22 Pages / 1.21 MByte
ST Microelectronics
3 Pages / 0.31 MByte
ST Microelectronics
24 Pages / 1.5 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
