TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 24.0 A |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.032 Ω |
Polarity | N-Channel |
Power Dissipation | 60 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±18.0 V |
Continuous Drain Current (Ids) | 24.0 A |
Rise Time | 50 ns |
Input Capacitance (Ciss) | 660pF @25V(Vds) |
Input Power (Max) | 60 W |
Fall Time | 12 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STD20NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Exceptional dV/dt capability
● 100% Avalanche tested
● Application oriented characterization
● -55 to 175°C Operating junction temperature
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