| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 40.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 80 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 165 ns |
| Input Capacitance (Ciss) | 1440pF @25V(Vds) |
| Input Power (Max) | 80 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 6.2 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STD40NF03LT4 is a STripFET™ II N-channel Power MOSFET developed using third generation of STMicroelectronics unique Single Feature Size™ strip-based process. The device has the best trade-off between ON-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. It is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
● Low gate charge
● Logic level device
● Optimal RDS (ON) x Qg trade-off
● Conduction losses reduced
● Switching losses reduced
● Low threshold drive
● -55 to 175°C Operating junction temperature range
ST Microelectronics
13 Pages / 0.34 MByte
ST Microelectronics
14 Pages / 0.33 MByte
ST Microelectronics
N-CHANNEL 30V - 0.012Ω - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET
ST Microelectronics
N-channel 30V - 0.009Ω - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
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