| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 45 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 310pF @25V(Vds) |
| Input Power (Max) | 45 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 45W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.2 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD4NK50Z-1 is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
● 2.3R RDS (ON)
● Extremely high dV/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeatability
● -55 to 150°C Operating junction temperature range
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