| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 650 V |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 226pF @100V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD6N65M2 is a MDmesh™ N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET developed using MDmesh™ M2 technology which has strip layout and improved vertical structure, the device exhibits low ON-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
ST Microelectronics
1 Pages / 0.42 MByte
ST Microelectronics
23 Pages / 0.86 MByte
ST Microelectronics
STMICROELECTRONICS STD6N65M2 Power MOSFET, N Channel, 4A, 650V, 1.2Ω, 10V, 3V
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