| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-251-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 8 mΩ |
| Power Dissipation | 60 W |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 24 V |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 1400pF @16V(Vds) |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 6.6 mm |
| Size-Width | 2.4 mm |
| Size-Height | 6.2 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Description
●This series of products utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. Thisis suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
●■ RDS(ON)
● Qg industry’s benchmark
●■ Conduction losses reduced
●■ Switching losses reduced
●■ Low threshold device
●Application
●■ Switching applications
ST Microelectronics
17 Pages / 0.36 MByte
ST Microelectronics
N-channel 25V - 0.0068Ω - 60A - DPAK - IPAK STripFET™2; III Power MOSFET
ST Microelectronics
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