| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 7.00 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.35 Ω |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 540pF @25V(Vds) |
| Input Power (Max) | 45 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 45W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | 150℃ (TJ) |
The STD7NS20T4 is a MESH OVERLAY™ N-channel Power MOSFET offers outstanding performance. The device layout coupled with the proprietary edge termination structure, makes it suitable in converters for lighting applications.
● 0.35R RDS (ON)
● Extremely high dV/dt capability
● 100% Avalanche tested
● Very low intrinsic capacitances
ST Microelectronics
8 Pages / 0.31 MByte
ST Microelectronics
17 Pages / 0.8 MByte
ST Microelectronics
N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY⑩ MOSFET
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