| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Case/Package | DIP-8 |
| Polarity | NPN |
| Power Dissipation | 45 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 4A |
| hFE Min | 8 @2A, 5V |
| Input Power (Max) | 3 W |
| DC Current Gain (hFE) | 8 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Design various electronic circuits with this versatile NPN STD840DN40 GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 3000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
ST Microelectronics
9 Pages / 0.1 MByte
ST Microelectronics
7 Pages / 0.07 MByte
Visual Communications Company
Visual Communications Company
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