| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.53 Ω |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 540pF @50V(Vds) |
| Input Power (Max) | 25 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STF10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company"s strip layout to yield one of the world"s lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low gate input resistance
ST Microelectronics
17 Pages / 0.88 MByte
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28 Pages / 0.56 MByte
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1 Pages / 0.09 MByte
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27 Pages / 1.22 MByte
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ST Microelectronics
N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
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