| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.37 Ω |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 850pF @50V(Vds) |
| Input Power (Max) | 25 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STF11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
19 Pages / 0.74 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
34 Pages / 0.79 MByte
ST Microelectronics
N-channel 600V, 0.37Ω, 10A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
ST Microelectronics
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh™ Power MOSFET
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