| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-CH |
| Power Dissipation | 30 W |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 800pF @50V(Vds) |
| Input Power (Max) | 25 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
Description
●These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
●Features
●• 100% avalanche tested
●• Low input capacitance and gate charge
●• low gate input resistance
●Applications
●• Switching applications
ST Microelectronics
20 Pages / 1.16 MByte
ST Microelectronics
21 Pages / 1.22 MByte
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