TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 0.18 Ω |
Polarity | N-Channel |
Power Dissipation | 25 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 550 V |
Rise Time | 9.5 ns |
Input Capacitance (Ciss) | 1260pF @100V(Vds) |
Input Power (Max) | 25 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 25W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | 150℃ (TJ) |
The STF18N55M5 is a MDmesh™ V N-channel Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The device has extremely low ON-resistance, which is unmatched among silicon based power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
● Higher VDSS rating
● High dV/dt capability
● Excellent switching performance
● Easy to drive
● 100% Avalanche tested
● -55 to 150°C Operating junction temperature range
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