| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 7.50 A |
| Rise Time | 22 ns |
| Maximum Forward Voltage (Max) | 1.6 V |
| Input Capacitance (Ciss) | 800pF @25V(Vds) |
| Input Power (Max) | 25 W |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with
●standard parts from various sources.
●■ Extremely high dv/dt capability
●■ Gate charge minimized
●■ Very low intrinsic capacitances
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