| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.162 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 500 V |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 1330pF @50V(Vds) |
| Input Power (Max) | 30 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | 150℃ (TJ) |
The STF23NM50N is a MDmesh™ II N-channel Power MOSFET made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to strip layout to yields one of lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
21 Pages / 0.84 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
34 Pages / 0.79 MByte
ST Microelectronics
Single N-Channel 500V 0.19Ω 45NC 30W Silicon Through Hole Mosfet - TO-220FP
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
