| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-Channel |
| Power Dissipation | 35 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 19.5A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 2050pF @50V(Vds) |
| Input Power (Max) | 35 W |
| Fall Time | 42 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 35W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The STF23NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● High dV/dt and avalanche capabilities
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