TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.135 Ω |
Polarity | N-Channel |
Power Dissipation | 35 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 500 V |
Rise Time | 19 ns |
Input Capacitance (Ciss) | 1735pF @25V(Vds) |
Input Power (Max) | 35 W |
Fall Time | 52 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 35W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | 150℃ (TJ) |
The STF28NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
● 100% Avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
ST Microelectronics
21 Pages / 0.93 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
34 Pages / 0.79 MByte
ST Microelectronics
Trans MOSFET N-CH 500V 21A 3Pin(3+Tab) TO-220FP Tube
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