TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.8 Ω |
Polarity | N-CH |
Power Dissipation | 25 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 800 V |
Continuous Drain Current (Ids) | 6A |
Rise Time | 14 ns |
Maximum Forward Voltage (Max) | 1.5 V |
Input Capacitance (Ciss) | 450pF @100V(Vds) |
Input Power (Max) | 25 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 25W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.6 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
●• Worldwide best FOM (figure of merit)
●• Ultra low gate charge
●• 100% avalanche tested
●• Zener-protected
●Applications
●• Switching applications
ST Microelectronics
15 Pages / 1.06 MByte
ST Microelectronics
15 Pages / 1.08 MByte
ST Microelectronics
16 Pages / 1.15 MByte
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