| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.78 Ω |
| Polarity | N-CH |
| Power Dissipation | 20 W |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 5.5A |
| Rise Time | 7.5 ns |
| Input Capacitance (Ciss) | 320pF @100V(Vds) |
| Fall Time | 13.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 20W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | 150℃ (TJ) |
Make an effective common gate amplifier using this STF9N60M2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with mdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
16 Pages / 0.43 MByte
ST Microelectronics
5 Pages / 0.27 MByte
ST Microelectronics
21 Pages / 1.43 MByte
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