| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 40 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 3.60 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 2115pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STF9NK90Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an optimization of STMicroelectronics" well-established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly lower, it also ensures very good dV/dt capability for the most demanding applications. This MOSFET complement STs" full range of high voltage power MOSFETs.
● Extremely high dV/dt capability
● 100% Avalanche tested
ST Microelectronics
17 Pages / 0.96 MByte
ST Microelectronics
11 Pages / 0.35 MByte
ST Microelectronics
N-CHANNEL 900V - 1.1W - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHPower MOSFET
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