TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.168 Ω |
Polarity | N-Channel |
Power Dissipation | 30 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 9 ns |
Input Capacitance (Ciss) | 1060pF @100V(Vds) |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 30 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 11.1 mm |
Size-Width | 4.8 mm |
Size-Height | 16.2 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
● Increased distance between pins (4.25 mm)
● Better protection versus high voltage arcing
● Cost saving solution avoiding the usage of expensive workarounds such as silicon potting, sleeves, leads-bending and sealant paste
ST Microelectronics
13 Pages / 0.58 MByte
ST Microelectronics
12 Pages / 0.57 MByte
ST Microelectronics
STMICROELECTRONICS STFH24N60M2 Power MOSFET, N Channel, 18A, 600V, 0.168Ω, 10V, 3V
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