| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.50 kV |
| Current Rating | 4.00 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 40 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.30 nF |
| Gate Charge | 50.0 nC |
| Drain to Source Voltage (Vds) | 1500 V |
| Breakdown Voltage (Drain to Source) | 1500 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 40 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 40W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 16.4 mm |
| Operating Temperature | 150℃ (TJ) |
●Description
●Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
●The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
●■ 100% avalanche tested
●■ Intrinsic capacitances and Qg minimized
●■ High speed switching
●■ Fully isolated TO-3PF and TO-220FH plastic packages
●■ Creepage distance path is 5.4 mm (typ.) for TO-3PF
●■ Creepage distance path is > 4 mm for TO-220FH
●Application
●■ Switching applications
ST Microelectronics
16 Pages / 0.44 MByte
ST Microelectronics
13 Pages / 0.75 MByte
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