| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Current Rating | 20.0 A |
| Case/Package | TO-263-3 |
| Power Dissipation | 125000 mW |
| Input Capacitance | 1300 pF |
| Rise Time | 340 ns |
| Breakdown Voltage (Collector to Emitter) | 440 V |
| Thermal Resistance | 62.5 ℃/W |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | -65℃ ~ 175℃ (TJ) |
This STGB10NB37LZT4 IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 440 V. Its maximum power dissipation is 125000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.
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